@conference {Malik1998375,
	title = {Metal oxide/silicon heterostructures: New solutions for different optoelectronic applications},
	booktitle = {Materials Research Society Symposium - Proceedings},
	volume = {487},
	year = {1998},
	note = {<p>cited By 1</p>
},
	pages = {375-380},
	abstract = {<p>In this paper we report the success in fabricating FTO/Si surface-barrier photodiodes produced by spray pyrolysis deposition technique, under ambient conditions. Three types of photodetectors for low-voltage-bias operation were developed based on high-resistivity silicon: 1. X-Ray detectors with energy resolution of 16.5\% at 661.5 keV (137Cs source), consisting of surface-barrier PIN photodiode with an active area of 50 mm2 operating at 5 V reverse bias, scintillator based on monocrystalline Bi4Ge3O12 and preamplifier (noise of 250 e- RMS.); 2. Fast-response surface-barrier FTO/n{\textendash}n+ silicon epitaxial photodiodes, operating at 10 V bias with rise times of 2 ns at λ = 0.85 μm; 3. Radiation-resistant drift epitaxial surface-barrier PIN photodiodes for unbiased operating conditions, with an exponential impurity distribution in a 8 μm thick epitaxial layer. A built-in electrical field due to the carrier concentration distribution in the epitaxial layer provides a considerable improvement in the {\textquoteleft}critical fluence{\textquoteright} value (3{\texttimes}1014 cm-2) for neutron irradiation.</p>
},
	url = {https://www.scopus.com/inward/record.uri?eid=2-s2.0-0031623393\&partnerID=40\&md5=0b90bc88b36c8285a3de0699c59c486e},
	author = {Malik, A., Martins, R.}
}
