@conference {{\'A}guas2000,
	title = {Correlation between surface/interface states and the performance of MIS structures},
	booktitle = {Materials Research Society Symposium - Proceedings},
	volume = {609},
	year = {2000},
	note = {<p>cited By 1</p>
},
	pages = {A1211-A1216},
	abstract = {<p>In order to understand the kinetics of formation of interface/surface states and its correlation on the final device performance, a preliminary study was performed on MIS structures, before and after surface oxidation/passivation, using different oxidation techniques and oxides: thermal (in air), chemical (in H2O2) and oxygen plasma. The devices used in this work are based on a glass/Cr/a-Si:H(n+)/a-Si:H(i)/SiOx/Pd structures, where the amorphous silicon intrinsic layer (i a-Si:H) with a photosensitivity of 107 was deposited by a modified plasma enhanced chemical vapour deposition (PECVD) triode system. The electrical properties of a-Si:H MIS structures were investigated by measuring their diode current-voltage characteristics in the dark and under illumination as well as the spectral response, as a function of the various oxidation techniques. Infrared spectroscopy and spectroscopic ellipsometry were used as a complementary tool to characterise the oxidised surface.</p>
},
	url = {https://www.scopus.com/inward/record.uri?eid=2-s2.0-0034429903\&partnerID=40\&md5=a63686e5ad2f45910209b1afc6c6c11c},
	author = {{\'A}guas, H.M.B., Fortunato, E.M.C., Cabrita, A.M., Silva, V., Tonello, P.M.N., Martins, R.F.P.}
}
