@article {{\'A}guas2000247,
	title = {Role of ion bombardment on the properties of a-Si : H films},
	journal = {Vacuum},
	volume = {60},
	number = {1-2},
	year = {2000},
	note = {<p>cited By 10</p>
},
	pages = {247-254},
	abstract = {<p>In this work we present a study of influence of ion bombardment on the optical, electrical and compositional properties of the intrinsic amorphous silicon films deposited in a modified triode plasma-enhanced chemical vapour deposition (PECVD) reactor. The application of a DC voltage to a grid placed in front of the r.f. electrode allowed us to control the energy and polarity of the ions striking the substrate during film growth. The results show a variation by two orders of magnitude in the dark conductivity from 10-10 to 6.2 {\texttimes} 10-12 (Ω cm)-1, while the photosensitivity varied from 2 {\texttimes} 105 to 2 {\texttimes} 107. A process plasma that takes place in the γ-type regime was associated with the use of a negative bias, while a process plasma like the one of the α-type regime was associated with the use of a positive bias. The films deposited with a bias ≈ 38 V are highly intrinsic and the abrupt change in the conductivity properties observed at this bias is attributed to a change in the density of the states ascribed to the position of the Fermi level. That is, a precise control of the energy of the ions striking the substrate during the film growth leads to improved film optoelectronic properties, very important for device applications. {\textcopyright} 2001 Elsevier Science Ltd. All rights reserved.</p>
},
	url = {https://www.scopus.com/inward/record.uri?eid=2-s2.0-0035157422\&partnerID=40\&md5=5ff49f3d58b4a04f4a183290a1048a2a},
	author = {{\'A}guas, H., Martins, R., Fortunato, E.}
}
