@article {Ferreira2001141,
	title = {Role of the gas pressure and hydrogen dilution on the properties of large area nanocrystalline p-type silicon films produced by hot wire technique},
	journal = {Materials Science and Engineering C},
	volume = {15},
	number = {1-2},
	year = {2001},
	note = {<p>cited By 0</p>
},
	pages = {141-144},
	abstract = {<p>This paper reports results on the role of high hydrogen dilution (above 80\%) on the electro-optical and structural properties of boron doped silicon films produced by hot wire chemical vapor deposition (HW-CVD) technique, keeping constant the filament temperature. The structural, compositional, morphological, electrical and optical properties achieved show that the films present excellent homogeneity over the entire 10 x 10 cm deposited area. These results were obtained for films produced at gas pressures below 66.5 Pa, in spite of the high flow rate used. {\textcopyright} 2001 Elsevier Science B.V. All rights reserved.</p>
},
	doi = {10.1016/S0928-4931(01)00250-8},
	url = {https://www.scopus.com/inward/record.uri?eid=2-s2.0-0034853144\&partnerID=40\&md5=38a6e4683744096c5cdf9a6b9923dd61},
	author = {Ferreira, I., Cabrita, A., Braz Fernandes, F., Fortunato, E., Martins, R.}
}
