@conference {Ferreira2001,
	title = {Properties of nano-crystalline n-type silicon films produced by hot wire plasma assisted technique},
	booktitle = {Materials Research Society Symposium - Proceedings},
	volume = {664},
	year = {2001},
	note = {<p>cited By 1</p>
},
	pages = {A761-A766},
	abstract = {<p>In this work, we present the properties of n-type silicon films obtained by hot wire plasma assisted technique produced at different rf power and gas flow rate. The films were produced at a filament temperature of 2000{\textdegree}C and the rf power was varied from 0 W to 200 W while gas flow rate was varied from 15 to 100 sccm keeping rf power at 50 W. In this flow rate range, the growth rate of the films varied from 5{\r A}/s to 250{\r A}/s and the corresponding electrical room dark conductivity varied from 10-2 to 10(Ωcm)-1. On the other hand, we observed that the electrical conductivity increased from 2 to 6(Ωcm)-1, and the Hall mobility from 0.1 to 2 cm2/V.s as rf power change from 0 W to 200 W. The infrared, EDS and XPS analyses revealed the existence of oxygen incorporation, which is not related to post-deposition oxidation. The X-ray diffraction and μRaman data show the presence of Si crystals in the films structure and the SEM micrographs reveal a granular surface morphology with grain sizes lower than 60 nm.</p>
},
	url = {https://www.scopus.com/inward/record.uri?eid=2-s2.0-0035556743\&partnerID=40\&md5=3c8006f9bc15d6e529b7372816e69259},
	author = {Ferreira, I., Fernandes, F.B., Vilarinho, P., Fortunato, E., Martins, R.}
}
