@article {{\'A}guas2002387,
	title = {Influence of a DC grid on silane r.f. plasma properties},
	journal = {Vacuum},
	volume = {64},
	number = {3-4},
	year = {2002},
	note = {<p>cited By 2</p>
},
	pages = {387-392},
	abstract = {<p>In this work we show that it is possible to control the plasma regime in the region close to the substrate in r.f. silane discharges. The PECVD reactor works in a modified triode configuration, where the control over the plasma regime is performed by polarising a grid electrode, placed close to the r.f. electrode, with a DC power source. Besides that, the DC grid allows also to control the energy of the ion bombardment, because the plasma potential will be a function of the voltage (Vpol) applied to the DC grid. The silane plasma was characterised with a Langmuir probe and an impedance probe. We were able to identify three plasma regimes in the region close to the substrate: γ' regime for Vpol\&lt;0 V; γ'-α regime for 0 V\&lt;Vpol\&lt;40 V; and α regime for Vpol40 V. The γ' regime is associated with a high concentration of dust particles in plasma and high electron energy (≈8eV), while the α regime is associated with a free dust plasma and low electron energy (≈2eV). The intermediate regime, γ'-α, is characterised by the presence of smaller particles (≈2-5nm) that can be beneficial for the film{\textquoteright}s properties. {\textcopyright} 2002 Elsevier Science Ltd. All rights reserved.</p>
},
	doi = {10.1016/S0042-207X(01)00343-8},
	url = {https://www.scopus.com/inward/record.uri?eid=2-s2.0-0036136012\&partnerID=40\&md5=fdbc699fbf0bf7299f825847f61b230c},
	author = {{\'A}guas, H., Fortunato, E., Martins, R.}
}
