@article {Ferreira2002261,
	title = {Composition and structure of silicon-carbide alloys obtained by hot wire and hot wire plasma assisted techniques},
	journal = {Vacuum},
	volume = {64},
	number = {3-4},
	year = {2002},
	note = {<p>cited By 9</p>
},
	pages = {261-266},
	abstract = {<p>In this work we present results concerning the composition and structure of intrinsic thin film silicon carbide alloys obtained by hot wire and hot wire plasma assisted techniques using ethylene as carbon gas source. The data show that by increasing the percentage of ethylene in the gas mixture from 14\% to 60\% the optical band gap is enhanced from 1.8 eV to 2.3 eV, for films produced by hot wire technique at a filament temperature of 2123K (1850{\textdegree}C). This is attributed to the increase of carbon incorporation, which was confirmed by the infrared spectra data where an increase is observed in the SiC stretching vibration mode ascribed to the peak located at around 750cm-1. On the other hand, the films produced by combining hot wire and rf plasma show a more efficient carbon incorporation. The SEM photographs of samples produced with hot wire technique reveal an amorphous structure, confirmed by micro-Raman spectroscopy data, while the samples produced with plasma assisting the process show a granular structure with grain sizes in the range of 100-200nm. {\textcopyright} 2002 Elsevier Science Ltd. All rights reserved.</p>
},
	doi = {10.1016/S0042-207X(01)00296-2},
	url = {https://www.scopus.com/inward/record.uri?eid=2-s2.0-0036135047\&partnerID=40\&md5=65ede1cc5708e2a64db474378a9473af},
	author = {Ferreira, I., Cabrita, A., Fortunato, E., Martins, R.}
}
