@article {A{\'A}guas200226,
	title = {High quality a-Si:H films for MIS device applications},
	journal = {Thin Solid Films},
	volume = {403},
	number = {404},
	year = {2002},
	note = {<p>cited By 10</p>
},
	pages = {26-29},
	abstract = {<p>This work presents the I-V results of a-Si:H/SiOx/Pd MIS (metal-insulator-semiconductor) structures. The a-Si:H was deposited by non-conventional modified triode PECVD. This new configuration allows the deposition of high quality a-Si:H with a photosensitivity of 106, indicating the presence of low density of defects. Spectroscopic ellipsometry measurements revealed that these films are highly dense and present a very smooth surface so allowing a low defect interface between the Pd and the a-Si:H. As a result, we could make MIS photodiodes with barrier heights of 1.17 eV, which give a high reduction of the reverse dark current, an increase of the signal to noise ratio of 106 and an open circuit voltage VOC = 0.5 V. {\textcopyright} 2002 Elsevier Science B.V. All rights reserved.</p>
},
	doi = {10.1016/S0040-6090(01)01655-8},
	url = {https://www.scopus.com/inward/record.uri?eid=2-s2.0-15744375197\&partnerID=40\&md5=e0071e4075ebd42a1eb5e85fd9f0d608},
	author = {A{\'A}guas, H., Fortunato, E., Silva, V., Pereira, L., Martins, R.}
}
