@article {{\'A}guas2004256,
	title = {Effect of the tunnelling oxide growth by H2O2 oxidation on the performance of a-Si:H MIS photodiodes},
	journal = {Materials Science and Engineering B: Solid-State Materials for Advanced Technology},
	volume = {109},
	number = {1-3},
	year = {2004},
	note = {<p>cited By 0</p>
},
	pages = {256-259},
	abstract = {<p>In this work metal-insulator-semiconductor (MIS) photodiodes with a structure: Cr/a-Si:H(n+)/a-Si:H(i)/oxide/Au were studied, where the main objective was to determine the influence of the oxide layer on the performance of the devices. The results achieved show that their performance is a function of both oxide thickness and oxide density. The a-Si:H oxidation method used was the immersion in H2O2 solution. By knowledge of the oxide growth process it was possible to fabricate photodiodes exhibiting an open circuit voltage of 0.65V and short circuit current density under AM1.5 illumination of 11mA/cm2, with a response times less than 1μs for load resistance \&lt;400Ω, and a signal to noise ratio of 1{\texttimes}107. {\textcopyright} 2003 Elsevier B.V. All rights reserved.</p>
},
	doi = {10.1016/j.mseb.2003.10.075},
	url = {https://www.scopus.com/inward/record.uri?eid=2-s2.0-2442436531\&partnerID=40\&md5=7d64f129f9831ec73509f357e2e402cb},
	author = {{\'A}guas, H., Perreira, L., Silva, R.J.C., Fortunato, E., Martins, R.}
}
