@article {Zhang200477,
	title = {Characterization of polymorphous silicon thin film and solar cells},
	journal = {Materials Science Forum},
	volume = {455-456},
	year = {2004},
	note = {<p>cited By 0</p>
},
	pages = {77-80},
	abstract = {<p>Polymorphous silicon (pm-Si:H) films have been prepared by a new regime of plasma enhanced chemical vapour deposition in the region adjacent of phase transition from amorphous to microcrystalline state. Comparing to the conventional amorphous silicon (a-Si:H), the pm-Si:H has higher photoconductivity (σph), better stability, and a broader light spectral response range in the longer wavelength range. It can be found from Raman spectra that there is a notable improvement in the medium range order. There are a blue shift for the stretching mode of IR. spectra and a red shift for the wagging mode. The shifts are attributed to the variation of the microstructure. By using pm-Si:H film as intrinsic layer, a p-i-n junction solar cell was prepared with the initial efficiency of 8.51\% and a stabilized efficiency of 8.01\% (AM1.5, 100mw/cm2) at room temperature (T R).</p>
},
	url = {https://www.scopus.com/inward/record.uri?eid=2-s2.0-17144452330\&partnerID=40\&md5=15ada88034195da0899f595c105cc6ae},
	author = {Zhang, S.a b , Xu, Y.a , Liao, X.a , Martins, R.b , Fortunate, E.b , Zeng, X.a , Hu, Z.a , Kong, G.a}
}
