@article {{\'A}guas200473,
	title = {MIS photodiodes of polymorphous silicon deposited at higher growth rates by 27.12 MHz PECVD discharge},
	journal = {Materials Science Forum},
	volume = {455-456},
	year = {2004},
	note = {<p>cited By 0</p>
},
	pages = {73-76},
	abstract = {<p>This work presents a comparative study between MIS photodiodes produced using high quality amorphous silicon (a-Si:H), deposited by PECVD at 2{\r A}/s, using 13.56 MHz frequency and polymorphous silicon (pm-Si) deposited at 3{\r A}/s using a 27.12 MHz frequency. The results show that the pm-Si:H outperforms the a-Si:H MIS photodiodes by having a rectification ratio of 107, and photosensitivity at AM1.5 conditions of 107, under 1V reverse bias. Apart from that, the pm-Si:H photodiode presents a higher open circuit voltage and better fill factor than a-Si:H MIS photodiode. These results prove that quality devices can be produced at high growth rates by using pm-Si:H. In this work the photodiode performances were correlated to the films properties, aiming to determine the characteristics responsible for the performances exhibited by the pm-Si:H devices.</p>
},
	url = {https://www.scopus.com/inward/record.uri?eid=2-s2.0-3142771246\&partnerID=40\&md5=4a2931475823d3ec7131073b102783e3},
	author = {{\'A}guas, H., Pereira, L., Raniero, L., Fortunato, E., Martins, R.}
}
