@article {Barquinha2004243,
	title = {Influence of the deposition conditions on the properties of titanium oxide produced by r.f. magnetron sputtering},
	journal = {Materials Science in Semiconductor Processing},
	volume = {7},
	number = {4-6 SPEC. ISS.},
	year = {2004},
	note = {<p>cited By 13</p>
},
	pages = {243-247},
	abstract = {<p>This work refers to the electro-optical and structural characteristics of titanium oxide (TiOx) thin films produced by radio frequency (r.f.) magnetron sputtering that present promising performances for gate dielectric applications, alone or in mixed tandem structures, such as with Al yOz films, taking advantage of its high dielectric constant. Films produced with a O2/Ar ratio between 0.1 and 0.15 present an improved stochiometry and density where the resistivity overcomes 1011 Ω cm and the fixed charge density decreases below 10 12 cm-2. The deposition pressure influences greatly the growth rate that seems to be a determinant factor dictating the films properties. {\textcopyright} 2004 Elsevier Ltd. All rights reserved.</p>
},
	doi = {10.1016/j.mssp.2004.09.116},
	url = {https://www.scopus.com/inward/record.uri?eid=2-s2.0-9544232544\&partnerID=40\&md5=08955064e13e1daa1473051f69d00b43},
	author = {Barquinha, P., Pereira, L., {\'A}guas, H., Fortunato, E., Martins, R.}
}
