@article {Pereira2005210,
	title = {Influence of the oxygen/argon ratio on the properties of sputtered hafnium oxide},
	journal = {Materials Science and Engineering B: Solid-State Materials for Advanced Technology},
	volume = {118},
	number = {1-3},
	year = {2005},
	note = {<p>cited By 44</p>
},
	pages = {210-213},
	abstract = {<p>In this work we have focused our attention on the role of the gas mixture (O2/Ar) used during HfO2 thin film processing by r.f. magnetron sputtering, to produce dielectrics with suitable characteristics to be used as gate dielectric. Increasing the O2/Ar ratio from 0 to 0.2, the films properties (optical gap, permittivity, resistivity and compactness) are improved. At these conditions, films with a band gap around 5 eV were produced, indicating a good stoichiometry. Also the flat band voltage has a reduction of almost three times indicating also a reduction of the same order on the fixed charge density at the semiconductor-insulator interface. The dielectric constant is around 16 which is very good, since the surface of the silicon where the HfO2 films were deposited contains a SiO 2 layer of about 3 nm that gives an effective dielectric constant above 20, close to the HfO2 stoichiometric value (\~{}25). Further increase on the O2/Ar ratio does not produce significant improvements. {\textcopyright} 2004 Elsevier B.V. All rights reserved.</p>
},
	doi = {10.1016/j.mseb.2004.12.030},
	url = {https://www.scopus.com/inward/record.uri?eid=2-s2.0-15344339242\&partnerID=40\&md5=dc4fa9092a6a0017715d3aedf3135a4f},
	author = {Pereira, L., Barquinha, P., Fortunato, E., Martins, R.}
}
