@article {Fortunato2005205,
	title = {Recent advances in ZnO transparent thin film transistors},
	journal = {Thin Solid Films},
	volume = {487},
	number = {1-2},
	year = {2005},
	note = {<p>cited By 264</p>
},
	pages = {205-211},
	abstract = {<p>Zinc oxide is a well-known wide band gap semiconductor material (3.4 eV at room temperature, in the crystalline form), which has many applications, such as for transparent conductors, varistors, surface acoustic waves, gas sensors, piezoelectric transducers and UV detectors. More recently, it is attracting considerable attention for its possible application to thin film transistors. In this paper, we present some of the recent results already obtained as well as the ones that are being developed in our laboratory. The main advantage presented by these new thin film transistors is the combination of high channel mobility and transparency produced at room temperature which makes these thin film transistors a very promising low cost device for the next generation of invisible and flexible electronics. Moreover, the processing technology used to fabricate this device is relatively simple and it is compatible with inexpensive plastic/flexible substrate technology. {\textcopyright} 2005 Elsevier B.V. All rights reserved.</p>
},
	doi = {10.1016/j.tsf.2005.01.066},
	url = {https://www.scopus.com/inward/record.uri?eid=2-s2.0-22944469098\&partnerID=40\&md5=c7a515feddc228eb595591bf73e593a2},
	author = {Fortunato, E., Barquinha, P., Pimentel, A., Gon{\c c}alves, A., Marques, A., Pereira, L., Martins, R.}
}
