@article {Xu20061972,
	title = {Heterojunction solar cells with n-type nanocrystalline silicon emitters on p-type c-Si wafers},
	journal = {Journal of Non-Crystalline Solids},
	volume = {352},
	number = {9-20 SPEC. ISS.},
	year = {2006},
	note = {<p>cited By 30</p>
},
	pages = {1972-1975},
	abstract = {<p>Hydrogenated nanocrystalline silicon (nc-Si:H) n-layers have been used to prepare heterojunction solar cells on flat p-type crystalline silicon (c-Si) wafers. The nc-Si:H n-layers were deposited by radio-frequency (RF) plasma enhanced chemical vapor deposition (PECVD), and characterized using Raman spectroscopy, optical transmittance and activation energy of dark-conductivity. The nc-Si:H n-layers obtained comprise fine grained nanocrystallites embedded in amorphous matrix, which have a wider bandgap and a smaller activation energy. Heterojunction solar cells incorporated with the nc-Si n-layer were fabricated using configuration of Ag (100 nm)/lT0 (80 nm)/n-nc-Si:H (15 nm)/buffer a-Si:H/p-c-Si (300 μm)/Al (200 nm), where a very thin intrinsic a-Si:H buffer layer was used to passivate the p-c-Si surface, followed by a hydrogen plasma treatment prior to the deposition of the thin nanocrystalline layer. The results show that heterojunction solar cells subjected to these surface treatments exhibit a remarkable increase in the efficiency, up to 14.1\% on an area of 2.43 cm2. {\textcopyright} 2006 Elsevier B.V. All rights reserved.</p>
},
	doi = {10.1016/j.jnoncrysol.2006.02.028},
	url = {https://www.scopus.com/inward/record.uri?eid=2-s2.0-33745474278\&partnerID=40\&md5=a326a153998c82a3f368b4fb20ff444e},
	author = {Xu, Y.a , Hu, Z.b c , Diao, H.a , Cai, Y.c , Zhang, S.b , Zeng, X.a , Hao, H.a , Liao, X.a , Fortunato, E.b , Martins, R.b}
}
