@article {Hu20061900,
	title = {Hydrogenated p-type nanocrystalline silicon in amorphous silicon solar cells},
	journal = {Journal of Non-Crystalline Solids},
	volume = {352},
	number = {9-20 SPEC. ISS.},
	year = {2006},
	note = {<p>cited By 30</p>
},
	pages = {1900-1903},
	abstract = {<p>A wide bandgap and highly conductive p-type hydrogenated nanocrystalline silicon (nc-Si:H) window layer was prepared with a conventional RF-PECVD system under large H dilution condition, moderate power density, high pressure and low substrate temperature. The optoelectrical and structural properties of this novel material have been investigated by Raman and UV-VIS transmission spectroscopy measurements indicating that these films are composed of nanocrystallites embedded in amorphous SiHx matrix and with a widened bandgap. The observed downshift of the optical phonon Raman spectra (514.4 cm-1) from crystalline Si peak (521 cm-1) and the widening of the bandgap indicate a quantum confinement effect from the Si nanocrystallites. By using this kind of p-layer, a-Si:H solar cells on bare stainless steel foil in nip sequence have been successfully prepared with a Voc of 0.90 V, a fill factor of 0.70 and an efficiency of 9.0\%, respectively. {\textcopyright} 2006 Elsevier B.V. All rights reserved.</p>
},
	doi = {10.1016/j.jnoncrysol.2006.02.010},
	url = {https://www.scopus.com/inward/record.uri?eid=2-s2.0-33744783361\&partnerID=40\&md5=00f78aa341d6d359bb06b599ee44ccce},
	author = {Hu, Z.a b c , Liao, X.a , Diao, H.a , Cai, Y.b , Zhang, S.c , Fortunato, E.c , Martins, R.c}
}
