@conference {Elangovan20061,
	title = {A next generation TCO material for display systems: Molybdenum doped indium oxide thin films},
	booktitle = {Materials Research Society Symposium Proceedings},
	volume = {936},
	year = {2006},
	note = {<p>cited By 0</p>
},
	pages = {1-6},
	abstract = {<p>Thin films of indium molybdenum oxide (IMO) were rf sputtered onto glass substrates at room temperature. The films were studied as a function of sputtering power (ranging 40-180 W) and sputtering time (ranging 2.5-20 min). Thickness of the films found varied between 50-400 nm. The films were characterized for their structural (XRD), electrical (Hall measurements) and optical (Transmittance spectra) properties. XRD studies revealed that the films are amorphous for the sputtering power <= 100 W and deposition time <= 5 min. All the other films are polycrystalline and the strongest refection along (222) plane showing a preferential orientation. A minimum bulk resistivity of 2.65 {\texttimes} 10-3 Ω-cm and a maximum carrier concentration of 4.16 {\texttimes} 1020 cm-3 have been obtained for the films sputtered at 180 W (10 min). Whereas maximum mobility (19.5 cm2 V-1 s-1) has been obtained for the films sputtered at 80 W (10 min). A maximum visible transmittance of 90\% (500 nm) has been obtained for the films sputtered at 80 W (10 min) with a minimum of 27\% for those sputtered at 180 W. The optical band gap of the films found varying between 3.75 and 3.90 eV for various sputtering parameters. {\textcopyright} 2006 Materials Research Society.</p>
},
	url = {https://www.scopus.com/inward/record.uri?eid=2-s2.0-33947643780\&partnerID=40\&md5=830becec51dfad38c219a4164fb7b1b6},
	author = {Elangovan, E., Marques, A., Martins, R., Fortunato, E.}
}
