@article {Pereira200658,
	title = {Electrical performances of low temperature annealed hafnium oxide deposited at room temperature},
	journal = {Materials Science Forum},
	volume = {514-516},
	number = {PART 1},
	year = {2006},
	note = {<p>cited By 1</p>
},
	pages = {58-62},
	abstract = {<p>In this work, HfO2 was deposited by r.f. sputtering at room temperature and then annealed for different times at 200{\textdegree}C in a forming gas atmosphere. After annealing for 2 hours the HfO2 layers present a reduction on the flat band voltage of about 1 V, relatively to the as deposited film, decreasing from -2.23V down to -1.28 V. This means an improvement of the interface properties and a reduction on the oxide charge density from 1.33{\texttimes}1012 cm-2 to 7.62{\texttimes}1011 cm -2. The dielectric constant reaches a maximum of 18.3 after 5h annealing due to film{\textquoteright}s densification. When annealing for longer times such as 10h a small degradation of the electrical properties is observed. After 10h annealing the dielectric constant, flat band voltage and fixed charge density are respectively, 14.9, -2.96 V and 1.64{\texttimes}1012 cm-2 and the leakage current also increases due to film{\textquoteright}s crystallization.</p>
},
	url = {https://www.scopus.com/inward/record.uri?eid=2-s2.0-37849002518\&partnerID=40\&md5=c0d96f385d091d9e38c143f68050a038},
	author = {Pereira, L., Barquinha, P., Fortunato, E., Martins, R.}
}
