@article {Wang20078780,
	title = {Influence of the reactive N2 gas flow on the properties of rf-sputtered ZnO thin films},
	journal = {Thin Solid Films},
	volume = {515},
	number = {24 SPEC. ISS.},
	year = {2007},
	note = {<p>cited By 25</p>
},
	pages = {8780-8784},
	abstract = {<p>Nitrogen (N)-doped ZnO thin films were RF sputtered with different N2 volume (ranging from 10\% to 100\%) on sapphire (001) substrates. The influence of N2 vol.\% on the properties of ZnO films was analyzed by various characterization techniques. The X-ray diffraction studies showed that the films grow along the preferential (002) crystallographic plane and the crystallinity varied with varying N2 vol.\%. The films sputtered with 25~vol.\% N2 showed better crystallinity. The transmittance was decreased with increasing N2 volume until 25\% and was almost constant above 25\%. A maximum optical band gap (2.08~eV) obtained for 10~vol.\% N2 decreased with increasing N2 volume to reach a minimum of 1.53~eV at 100\%. The compositional analysis confirmed the incorporation of N into ZnO films, and its concentration increased with increasing N2 volume to reach a maximum of \~{} 3.7 {\texttimes} 1021~atom/cm3 at 75\% but then decreased slightly to 3.42 {\texttimes} 1021~atoms/cm3. The sign of Hall coefficient confirmed that the films sputtered with <= 25~vol.\% N2 possess p-type conductivity which changes to n-type for \&gt; 25~vol.\% N2. {\textcopyright} 2007 Elsevier B.V. All rights reserved.</p>
},
	doi = {10.1016/j.tsf.2007.03.062},
	url = {https://www.scopus.com/inward/record.uri?eid=2-s2.0-34548827052\&partnerID=40\&md5=f043056a98a20b71a1e8c6dd5c9d9c9d},
	author = {Wang, J.a , Sallet, V.b , Jomard, F.b , Botelho do Rego, A.M.c , Elamurugu, E.a , Martins, R.a , Fortunato, E.a}
}
