@article {Elangovan20078549,
	title = {Effect of base and oxygen partial pressures on the electrical and optical properties of indium molybdenum oxide thin films},
	journal = {Thin Solid Films},
	volume = {515},
	number = {24 SPEC. ISS.},
	year = {2007},
	note = {<p>cited By 7</p>
},
	pages = {8549-8552},
	abstract = {<p>Indium molybdenum oxide thin films were RF sputtered at room temperature on glass substrates with a reference base pressure of 7.5 {\texttimes} 10- 4~Pa. The electrical and optical properties of the films were studied as a function of oxygen partial pressures (OPP) ranging from 1.5 {\texttimes} 10- 3~Pa to 3.5 {\texttimes} 10- 3~Pa. The obtained data show that the bulk resistivity of the films increased by about 4 orders of magnitude (from 7.9 {\texttimes} 10- 3 to 7.6 {\texttimes} 101~Ω-cm) when the OPP increased from 1.5 {\texttimes} 10-3 to 3.5 {\texttimes} 10- 3~Pa, and the carrier concentration decreased by about 4 orders (from 1.77 {\texttimes} 1020 to 2.31 {\texttimes} 1016~cm- 3). On the other hand, the average visible transmittance of 30.54\% of the films (brown colour; OPP = 1.5 {\texttimes} 10- 3~Pa) was increased with increasing OPP to a maximum of 80.47\% (OPP = 3.5 {\texttimes} 10- 3~Pa). The optical band gap calculated from the absorption edge of the transmittance spectra ranges from 3.77 to 3.88~eV. Further, the optical and electrical properties of the films differ from those deposited at similar conditions but with a base pressure lower than 7.5 {\texttimes} 10- 4~Pa. {\textcopyright} 2007 Elsevier B.V. All rights reserved.</p>
},
	doi = {10.1016/j.tsf.2007.03.127},
	url = {https://www.scopus.com/inward/record.uri?eid=2-s2.0-34548859521\&partnerID=40\&md5=ae76f8075ab8c9b24ddcf7813daaecdf},
	author = {Elangovan, E., Martins, R., Fortunato, E.}
}
