@conference {Fortunato2007371,
	title = {Advanced materials for the next generation of thin film transistors},
	booktitle = {IDMC 2007 - International Display Manufacturing Conference and FPD Expo - Proceedings},
	year = {2007},
	note = {<p>cited By 1</p>
},
	pages = {371-373},
	abstract = {<p>Staggered bottom gate transparent thin film transistors (TTFTs) have been produced by rf magnetron sputtering at room temperature, using amorphous indium-zinc-oxide (IZO) semiconductor, for the channel as well as for the drain and source regions. The obtained TTFTs operate in the enhancement mode with threshold voltages of 2.4 V, saturation mobility of 22.7 cm2/Vs, gate voltage swing of 0.44 V/dec and an ON/OFF current ratio of 7{\texttimes}10 7. The high performances presented by these TTFTs produced at room temperature, make these TFTs a promising candidate for flexible, wearable, disposable portable electronics as well as battery-powered applications.</p>
},
	url = {https://www.scopus.com/inward/record.uri?eid=2-s2.0-56049103340\&partnerID=40\&md5=7b06b5582006e90cd0e382768565e106},
	author = {Fortunato, E., Barquinha, P., Pereira, L., Gon{\c c}alves, G., Martins, R.}
}
