@article {Raniero2007575,
	title = {Differences between amorphous and nanostructured silicon films and their application in solar cell},
	journal = {High Temperature Material Processes},
	volume = {11},
	number = {4},
	year = {2007},
	note = {<p>cited By 2</p>
},
	pages = {575-583},
	abstract = {<p>Nanostructured silicon thin films were produced in a single PECVD (Plasma Enhanced Chemical Vapour Deposition) reactor using an excitation frequency of 27.12 MHz. The process parameters were selected to allow the films{\textquoteright} production to be performed at the transition region (from amorphous to microcrystalline), aiming their use in solar cells. The real and imaginary parts of pseudo-dielectric function of these nanostructured films show a shift to higher energies and the order factor reveals an improvement on the short atomic range order of the films produced. The solar cells with a structure of ZGO/p-a-SiC:H/buffer1/buffer2/i-(nc/a-Si:H)/n-a-Si:H/Ag/Al were deposited with nanostructured intrinsic layer, showing a good performances, with current densities of about 14.48 mA/cm2, open circuit voltage of 0.94 V, and fill factor of 0.67, which lead to efficiencies of 9.12\%. The solar cell degradation study performed under AM1.5 spectrum conditions up to 100 hours revealed a decrease on the solar cell efficiency of about 8.11\%, mainly related to the decreasing of current density. Despite that, the open circuit voltage increases slightly after the degradation.</p>
},
	doi = {10.1615/HighTempMatProc.v11.i4.90},
	url = {https://www.scopus.com/inward/record.uri?eid=2-s2.0-38349052909\&partnerID=40\&md5=3e970b8948a216c8d03ef37b4dd621e2},
	author = {Raniero, L.a , Ferreira, I.b , Fortunato, E.b , Martins, R.b}
}
