@article {Elangovan20081359,
	title = {Some studies on highly transparent wide band gap indium molybdenum oxide thin films rf sputtered at room temperature},
	journal = {Thin Solid Films},
	volume = {516},
	number = {7},
	year = {2008},
	note = {<p>cited By 14</p>
},
	pages = {1359-1364},
	abstract = {<p>Transparent wide band gap indium molybdenum oxide (IMO) thin films were rf sputtered on glass substrates at room temperature. The films were studied as a function of sputtering power (ranging 40-180~W) and sputtering time (ranging 2.5-20~min). The film thickness was varied in the range 50-400~nm. The as-deposited films were characterized by their structural (XRD), morphological (AFM), electrical (Hall Effect measurements) and optical (visible-NIR spectroscopy) properties. XRD studies revealed that the films are amorphous for the sputtering power <= 100~W and the deposition time <= 5~min, and the rest are polycrystalline with a strong reflection from (222) plane showing a preferential orientation. A minimum bulk resistivity of 2.65 {\texttimes} 10- 3~Ω cm and a maximum carrier concentration of 4.16 {\texttimes} 1020~cm- 3 are obtained for the crystalline films sputtered at 180~W (10~min). Whereas a maximum mobility (19.5 ~cm2 V- 1 s- 1) and average visible transmittance (\~{} 85\%) are obtained for the amorphous films sputtered at 80~W and 100~W respectively for 10~min. A minimum transmittance (\~{} 18\%) was obtained for the crystalline films sputtered at 180~W (\~{} 305~nm thick). The optical band gap was found varying between 3.75 and 3.90~eV for various sputtering parameters. The obtained results are analyzed and corroborated with the structure of the films. {\textcopyright} 2007 Elsevier B.V. All rights reserved.</p>
},
	doi = {10.1016/j.tsf.2007.03.155},
	url = {https://www.scopus.com/inward/record.uri?eid=2-s2.0-38649096325\&partnerID=40\&md5=08725280ed2e7fb8948e68116b9f80af},
	author = {Elangovan, E.a , Marques, A.a , Viana, A.S.b , Martins, R.a , Fortunato, E.a}
}
