@article {Wang2008,
	title = {Co-doping of aluminium and gallium with nitrogen in ZnO films deposited by RF magnetron sputtering},
	journal = {Journal of Physics Condensed Matter},
	volume = {20},
	number = {7},
	year = {2008},
	note = {<p>cited By 5</p>
},
	abstract = {<p>N, (N+Ga) and (N+Al) doped ZnO films were deposited on c-plane sapphire substrates by RF magnetron sputtering at room temperature. The samples were characterized by their structural, surface morphological, compositional and optical properties. The x-ray diffraction studies confirmed the co-doping of (N+Ga) and (N+Al) besides showing improvement in the crystallinity when compared with the single Ndoping. The surface of the films becomes rougher after co-doping. The x-ray photoelectron spectroscopy and Rutherford back-scattering analysis indicate that the co-doping changes the chemical states and varies the amount of nitrogen (N) in ZnO. The amount of {\textquoteright}N{\textquoteright} has been greatly increased for (N+Ga) co-doping, indicating that it is the best co-doping pair for p-type ZnO. Additionally, co-doping has increased the average visible transmittance (40-650nm) and the optical band gap is shifted towards shorter wavelength. In the case of (N+Al) co-doping, the band gap becomes wider than that of undoped ZnO. {\textcopyright} IOP Publishing Ltd.</p>
},
	doi = {10.1088/0953-8984/20/7/075220},
	url = {https://www.scopus.com/inward/record.uri?eid=2-s2.0-38949196677\&partnerID=40\&md5=4ee5eea66663205cb9bde0f54e8f3c85},
	author = {Wang, J.a , Elamurugu, E.a , Barradas, N.P.b , Alves, E.b , Rego, A.c , Gon{\c c}alves, G.a , Martins, R.a , Fortunato, E.a}
}
