@article {Figueiredo20083949,
	title = {Effect of post-annealing on the properties of copper oxide thin films obtained from the oxidation of evaporated metallic copper},
	journal = {Applied Surface Science},
	volume = {254},
	number = {13},
	year = {2008},
	note = {<p>cited By 90</p>
},
	pages = {3949-3954},
	abstract = {<p>Thin films of copper oxide were obtained through thermal oxidation (100-450 {\textdegree}C) of evaporated metallic copper (Cu) films on glass substrates. The X-ray diffraction (XRD) studies confirmed the cubic Cu phase of the as-deposited films. The films annealed at 100 {\textdegree}C showed mixed Cu-Cu2O phase, whereas those annealed between 200 and 300 {\textdegree}C showed a single cubic Cu2O phase. A single monoclinic CuO phase was obtained from the films annealed between 350 and 450 {\textdegree}C. The positive sign of the Hall coefficient confirmed the p-type conductivity in the films with Cu2O phase. However, a relatively poor crystallinity of these films limited the p-type characteristics. The films with Cu and CuO phases show n-type conductivity. The surface of the as-deposited is smooth (RMS roughness of 1.47 nm) and comprised of uniformly distributed grains (AFM and SEM analysis). The post-annealing is found to be effective on the distribution of grains and their sizes. The poor transmittance of the as-deposited films (\&lt;1\%) is increased to a maximum of \~{}80\% (800 nm) on annealing at 200 {\textdegree}C. The direct allowed band gap is varied between 2.03 and 3.02 eV. {\textcopyright} 2008 Elsevier B.V. All rights reserved.</p>
},
	doi = {10.1016/j.apsusc.2007.12.019},
	url = {https://www.scopus.com/inward/record.uri?eid=2-s2.0-41749086660\&partnerID=40\&md5=1c2ce722bab3688d6c754a89209b3766},
	author = {Figueiredo, V.a , Elangovan, E.a , Gon{\c c}alves, G.a , Barquinha, P.a , Pereira, L.a , Franco, N.b , Alves, E.b , Martins, R.a , Fo}
}
