@article {Barquinha2008,
	title = {The effect of deposition conditions and annealing on the performance of high-mobility GIZO TFTs},
	journal = {Electrochemical and Solid-State Letters},
	volume = {11},
	number = {9},
	year = {2008},
	note = {<p>cited By 83</p>
},
	pages = {H248-H251},
	abstract = {<p>The influence of oxygen content, radio-frequency (rf) sputtering power, and postdeposition annealing on the electrical properties of gallium-indium-zinc oxide (GIZO) thin-film transistors (TFTs) is analyzed. Little to no oxygen content in the sputtering chamber is crucial to obtain high-performance devices, even before annealing. In contrast, a high oxygen content and rf power lead, respectively, to unstable/poor performing and depletion mode TFTs before annealing, and mainly for these "nonideal" conditions, annealing proves to be effective to improve device performance/stability and to decrease the performance discrepancy among TFTs processed under different oxygen and rf power conditions. Best TFTs present a field-effect mobility of 46 cm2 / V s, subthreshold swing of 0.26 V/dec, threshold voltage of 0.70 V, and an on/off ratio 108 - 109. These results are a consequence of the optimized processing and of the usage of proper GIZO target composition, 1:2:1 mol. {\textcopyright} 2008 The Electrochemical Society.</p>
},
	doi = {10.1149/1.2945869},
	url = {https://www.scopus.com/inward/record.uri?eid=2-s2.0-48249116747\&partnerID=40\&md5=016ea0f572b4d7e4791ab3888d2de04f},
	author = {Barquinha, P., Pereira, L., Gonalves, G., Martins, R., Fortunato, E.}
}
