@article {Elangovan20081489,
	title = {Effect of annealing on molybdenum doped indium oxide thin films RF sputtered at room temperature},
	journal = {Vacuum},
	volume = {82},
	number = {12},
	year = {2008},
	note = {<p>cited By 7</p>
},
	pages = {1489-1494},
	abstract = {<p>Thin films of molybdenum doped indium oxide (IMO) were deposited on glass at room temperature using an in-built three-source RF magnetron sputtering. The films were studied as a function of oxygen volume percentage (O2 vol. \%; ranging from 0.0 to 17.5\%) in the sputtering chamber. The as-deposited amorphous films were crystallized on post-annealing. The as-deposited films are low conducting and Hall coefficients were undetectable; whereas post-annealed films possess fairly high conductivity. The lowest transmittance (11.96\% at 600 nm) observed from the films deposited without oxygen increased to a maximum of 88.01\% (3.5 O2 vol. \%); whereas this transmittance was decreased with the increasing O2 vol. \% to as low as 81.04\% (15.6 O2 vol. \%); a maximum of 89.80\% was obtained from the films annealed at 500 {\textdegree}C in open air (3.5 O2 vol. \%). The optical band gap of 3.80 eV obtained from the films deposited without oxygen increased with increasing O2 vol. \% to as high as 3.91 eV (17.5 O2 vol. \%). A maximum of 3.92 eV was obtained from the films annealed at 300 {\textdegree}C in N2:H2 gas atmosphere (17.5 O2 vol. \%). {\textcopyright} 2008 Elsevier Ltd. All rights reserved.</p>
},
	doi = {10.1016/j.vacuum.2008.03.005},
	url = {https://www.scopus.com/inward/record.uri?eid=2-s2.0-49349088879\&partnerID=40\&md5=8cd666bae43b4f2d68f027457b7b5aed},
	author = {Elangovan, E., Marques, A., Pimentel, A., Martins, R., Fortunato, E.}
}
