@article {Fortunato2008348,
	title = {New amorphous oxide semiconductor for thin film transistors (TFTs)},
	journal = {Materials Science Forum},
	volume = {587-588},
	year = {2008},
	note = {<p>cited By 1</p>
},
	pages = {348-352},
	abstract = {<p>Thin film transistors (TFTs) have been produced by rf magnetron sputtering at room temperature, using non conventional oxide materials like amorphous indium-zinc-oxide (IZO) semiconductor, for the channel as well as for the drain and source regions. The obtained TFTs operate in the enhancement mode with threshold voltages of 2.4 V, saturation mobility of 22.7 cm2/Vs, gate voltage swing of 0.44 V/dec and an ON/OFF current ratio of 7{\texttimes}10 7. The high performances presented by these TFTs associated to a high electron mobility, at least two orders of magnitude higher than that of conventional amorphous silicon TFTs and a low threshold voltage, opens new doors for applications in flexible, wearable, disposable portable electronics as well as battery-powered applications.</p>
},
	url = {https://www.scopus.com/inward/record.uri?eid=2-s2.0-60349098168\&partnerID=40\&md5=f30555d6733ceafff3d365b05e08f6f1},
	author = {Fortunato, E., Barquinha, P., Gon{\c c}alves, G., Pereira, L., Martins, R.}
}
