@article {Filonovich20091253,
	title = {Highly conductive p-type nanocrystalline silicon films deposited by RF-PECVD using silane and trimethylboron mixtures at high pressure},
	journal = {Vacuum},
	volume = {83},
	number = {10},
	year = {2009},
	note = {<p>cited By 21</p>
},
	pages = {1253-1256},
	abstract = {<p>In this paper we present a study of boron-doped nc-Si:H films prepared by PECVD at high deposition pressure (>=4 mbar), high plasma power and low substrate temperature (<=200 {\textdegree}C) using trimethylboron (TMB) as a dopant gas. The influence of deposition parameters on electrical, structural and optical properties is investigated. We determine the deposition conditions that lead to the formation of p-type nanocrystalline silicon thin films with very high crystallinity, high value of dark conductivity (\&gt;7 (Ω cm)-1) and high optical band gap (>=1.7 eV). Modeling of ellipsometry spectra reveals that the film growth mechanism should proceed through a sub-surface layer mechanism that leads to silicon crystallization. The obtained films are very good candidates for application in amorphous and nanocrystalline silicon solar cells as a p-type window layer. {\textcopyright} 2009 Elsevier Ltd. All rights reserved.</p>
},
	doi = {10.1016/j.vacuum.2009.03.017},
	url = {https://www.scopus.com/inward/record.uri?eid=2-s2.0-67349209304\&partnerID=40\&md5=ac577d7c2e50fb1eee744ef215342ef6},
	author = {Filonovich, S.A.a , {\'A}guas, H.a b , Bernacka-Wojcik, I.b , Gaspar, C.a , Vilarigues, M.c , Silva, L.B.a b , Fortunato, E.a b , Ma}
}
