@article {Alves20091274,
	title = {Structural and optical properties of nitrogen doped ZnO films},
	journal = {Vacuum},
	volume = {83},
	number = {10},
	year = {2009},
	note = {<p>cited By 8</p>
},
	pages = {1274-1278},
	abstract = {<p>Zinc oxide is getting an enormous attention due to its potential applications in a variety of fields such as optoelectronics, spintronics and sensors. The renewed interest in this wide band gap oxide semiconductor relies on its direct high energy gap (Eg \~{} 3.437 eV at low temperatures) and large exciton binding energy. However to reach the stage of device production the difficulty to produce in a reproducible way p-type doping must be overcome. In this study we discuss the structural and optical properties of ZnO films doped with nitrogen, a potential p-type dopant. The films were deposited by magnetron sputtering using different conditions and substrates. The composition and structural properties of the films were studied combining X-ray diffraction (XRD), Rutherford backscattering (RBS), and heavy ion elastic recoil detection analysis (HI-ERDA). The results show an improvement of the quality of the films deposited on sapphire with increasing radio-frequency (RF) power with a preferentially growth along the c-axis. The ERDA analysis reveals the presence of H in the films and a homogeneous composition over the entire thickness. The photoluminescence of annealed samples evidences an improvement on the optical quality as identified by the well structured near band edge recombination. {\textcopyright} 2009 Elsevier Ltd. All rights reserved.</p>
},
	doi = {10.1016/j.vacuum.2009.03.022},
	url = {https://www.scopus.com/inward/record.uri?eid=2-s2.0-67349258288\&partnerID=40\&md5=055c51ce6efa482f28c9da1291fec8a2},
	author = {Alves, E.a , Franco, N.a , Barradas, N.P.a , Munnik, F.b , Monteiro, T.c , Peres, M.c , Wang, J.d , Martins, R.d , Fortunato, E.}
}
