@article {Fortunato2009197,
	title = {Zinc oxide, a multifunctional material: From material to device applications},
	journal = {Applied Physics A: Materials Science and Processing},
	volume = {96},
	number = {1},
	year = {2009},
	note = {<p>cited By 75</p>
},
	pages = {197-205},
	abstract = {<p>In this paper we report on some of the recent advances in transparent thin film oxide semiconductors, specifically zinc oxide produced by radio frequency magnetron sputtering at room temperature, with multifunctional properties. By controlling the deposition parameters it is possible to produce undoped material with electronic semiconductor properties, or by doping it to get either n-type or p-type semiconductor behavior. In this work we refer to our experience in producing n-type doped zinc oxide as transparent electrode to be used in optoelectronic applications such as solar cells and position sensitive detectors, while the undoped zinc oxide can be used as active layer of fully transparent thin film transistors. {\textcopyright} 2009 Springer-Verlag.</p>
},
	doi = {10.1007/s00339-009-5086-5},
	url = {https://www.scopus.com/inward/record.uri?eid=2-s2.0-67349213281\&partnerID=40\&md5=77a3947bfe2712c237d1722700c32a40},
	author = {Fortunato, E., Gon{\c c}alves, A., Pimentel, A., Barquinha, P., Gon{\c c}alves, G., Pereira, L., Ferreira, I., Martins, R.}
}
