@article {Pereira20092149,
	title = {Sputtered multicomponent amorphous dielectrics for transparent electronics},
	journal = {Physica Status Solidi (A) Applications and Materials Science},
	volume = {206},
	number = {9},
	year = {2009},
	note = {<p>cited By 14</p>
},
	pages = {2149-2154},
	abstract = {<p>In this work, we present the structural and electrical properties of HfO 2, HfO 2 +SiO 2, and HfO 2 +Al 2O 3 dielectric composite layers deposited by sputtering without any intentional substrate heating. The films were deposited on glass and 〈100〉 crystalline silicon (c-Si) substrates from ceramic targets by using argon (Ar) and oxygen (O 2) as sputtering and reactive gases, respectively. The incorporation of SiO 2 and Al 2O 3 into hafnia was obtained by co-sputtering and itwas controlled by adjusting the ratio of r.f. power applied between the targets. The HfO 2 films present a microcrystalline structure, when deposited at room temperature (RT). The lowest leakage current in c-Si MIS (Metal-Insulator- Semiconductor) structures (below 10 9A/cm 2 at 10V on films with a thickness around 180 nm) was obtained for an Ar/O 2 ratio of 14:1 sccm, and further increase in O 2 flow does not enhance the electrical characteristics. The codeposition of SiO 2 or Al 2O 3 with hafnia has a strong influence on the structure of the resulting films since they become amorphous. The leakage current in MISstructures incorporating these multi-component dielectrics is reduced at least by a factor of 2, which is accompanied by an increase on the band gap. The dielectric constant is decreased due to the lower values for SiO 2 and Al 2O 3. {\textcopyright} 2009 WILEY-VCH Verlag GmbH \&amp; Co. KGaA, Weinheim.</p>
},
	doi = {10.1002/pssa.200881799},
	url = {https://www.scopus.com/inward/record.uri?eid=2-s2.0-70349151333\&partnerID=40\&md5=b94a3dc15d7c2447577885c04eef5b8c},
	author = {Pereira, L.a , Barquinha, P.a , Gon{\c c}alves, G.a , Vil{\`a}, A.b , Olziersky, A.b , Morante, J.b , Fortunato, E.a , Martins, R.a}
}
