@article {Parthiban2009,
	title = {High near-infrared transparency and carrier mobility of Mo doped In2 O 3 thin films for optoelectronics applications},
	journal = {Journal of Applied Physics},
	volume = {106},
	number = {6},
	year = {2009},
	note = {<p>cited By 10</p>
},
	abstract = {<p>Molybdenum (0-1 at. \%) doped indium oxide thin films with high near-infrared (NIR) transparency and high carrier mobility were deposited on Corning-1737 glass substrates at 400 {\textdegree}C by a spray pyrolysis experimental technique. X-ray diffraction (XRD) analysis confirmed the cubic bixbyite structure of indium oxide. The preferred growth orientation along the (222) plane for the low Mo doping level (0.5 at. \%) shifts to (400) for higher Mo doping levels (\&lt;0.6 at. \%). The crystallite size extracted from the XRD data corroborates the changes in full width at half maximum due to the variation in Mo doping. A scanning electron microscopy study illustrated the evolution in the surface microstructure as a function of Mo doping. The negative sign of the Hall coefficient confirmed the n -type conductivity. A high carrier mobility of \~{}122.4 cm2 /V s, a carrier concentration of \~{}9.5{\texttimes} 1019 cm-3, a resistivity of \~{}5.3{\texttimes} 10-4cm, and a high figure of merit of \~{}4.2{\texttimes} 10-2 -1 are observed for the films deposited with 0.5 at. \% Mo. The obtained high average transparency of \~{}83\% in the wavelengths ranging from 400 to 2500 nm confirmed the extension of transmittance well into the NIR region. {\textcopyright} 2009 American Institute of Physics.</p>
},
	doi = {10.1063/1.3224946},
	url = {https://www.scopus.com/inward/record.uri?eid=2-s2.0-70349640168\&partnerID=40\&md5=daa23c1256806a2aa5b3a7e712d84153},
	author = {Parthiban, S.a , Elangovan, E.b , Ramamurthi, K.a , Martins, R.b , Fortunato, E.b}
}
