@article {Parthiban2010406,
	title = {Investigations on high visible to near infrared transparent and high mobility Mo doped In2O3 thin films prepared by spray pyrolysis technique},
	journal = {Solar Energy Materials and Solar Cells},
	volume = {94},
	number = {3},
	year = {2010},
	note = {<p>cited By 35</p>
},
	pages = {406-412},
	abstract = {<p>High visible to near infrared (NIR) transparent Mo (0-1 at\%) doped In2O3 (IMO) thin films with high carrier mobility were deposited on Corning-1737 glass substrates at 400 {\textdegree}C by spray pyrolysis experimental technique. The films were annealed in vacuum (\~{}1{\texttimes}10-4 mbar) at 550 {\textdegree}C for 45 min. XRD analysis confirmed that indium oxide belongs to cubic bixbyite structure. The preferred growth orientation along (2 2 2) plane for low Mo doping level shifts to (4 0 0) for higher Mo doping levels. Crystallite sizes extracted from the XRD data corroborate the changes in full-width at half-maximum due to the variation in Mo doping. Scanning electron microscopy study illustrates the evolution in surface microstructures as a function of Mo doping. The negative sign of Hall coefficient confirmed n-type conductivity. Films with high mobility of \~{}149 cm2/(V s), carrier concentration of \~{}1.0{\texttimes}1020 cm-3, resistivity of \~{}4.0{\texttimes}10-4 Ω cm and high figure of merit of \~{}1.02{\texttimes}10-2 Ω-1 were observed for post-annealed films (0.5 at\% Mo). The obtained high average transparency of \~{}83\% in the wavelength range 400-2500 nm confirms that transmittance is well extended into the NIR region. {\textcopyright} 2009 Elsevier B.V. All rights reserved.</p>
},
	doi = {10.1016/j.solmat.2009.10.017},
	url = {https://www.scopus.com/inward/record.uri?eid=2-s2.0-75149167355\&partnerID=40\&md5=d9b4a2a7b5c28cbbdd92c9df6fc4a80e},
	author = {Parthiban, S.a , Elangovan, E.b , Ramamurthi, K.a , Martins, R.b , Fortunato, E.b}
}
