@article {Barquinha2010762,
	title = {Low-temperature sputtered mixtures of high-κ and high bandgap dielectrics for GIZO TFTs},
	journal = {Journal of the Society for Information Display},
	volume = {18},
	number = {10},
	year = {2010},
	note = {<p>cited By 28</p>
},
	pages = {762-772},
	abstract = {<p>This paper discusses the properties of sputtered multicomponent amorphous dielectrics based on mixtures of high-κ and high-bandgap materials and their integration in oxide TFTs, with processing temperatures not exceeding 1 50{\textdegree} C. Even if Ta2O5 films are already amorphous, multicomponent materials such as Ta2O5-SiO2 and Ta2O5-Al2O3 allow an increase in the bandgap and the smoothness of the films, reducing their leakage current and improving (in the case of Ta2O5-SiO2)the dielectric/semiconductor interface properties when these dielectrics are integrated in TFTs. For HfO2- based dielectrics, the advantages of multicomponent materials are even clearer: while HfO2 films present a polycrystalline structure and a rough surface, HfO2-SiO2 films exhibit an amorphous structure and a very smooth surface. The integration of the multicomponent dielectrics in GIZO TFTs allows remarkable performance, comparable with that of GIZO TFTs using SiO2 deposited at 400{\textdegree}C by PECVD. For instance, with Ta2O5-SiO2 as the dielectric layer, field-effect mobility of 35 cm2/(V-sec), close to 0 V turn-on voltage, an on/off ratio higher than 106, a subthreshold slope of 0.24 V/dec, and a small/recoverable threshold voltage shifts under constant current (ID = 10 μ,A) stress during 24 hours are achieved. Initial results with multilayers of SiO2/HfO 2-SiO2/SiO2 are also shown, allowing a lower leakage current with lower thickness and excellent device performance. {\textcopyright} Copyright 2010 Society for Information Display.</p>
},
	doi = {10.1889/JSID18.10.762},
	url = {https://www.scopus.com/inward/record.uri?eid=2-s2.0-77958198978\&partnerID=40\&md5=9fc1ee27aea4bdc27fe7807d925301d5},
	author = {Barquinha, P.a , Pereira, L.a , Gon{\c c}alves, G.a , Kuscer, D.b , Kosec, M.b , Vil{\`a}, A.c , Olziersky, A.c , Morante, J.R.d e , Mart}
}
