@article {Nayak2010,
	title = {Zinc concentration dependence study of solution processed amorphous indium gallium zinc oxide thin film transistors using high-k dielectric},
	journal = {Applied Physics Letters},
	volume = {97},
	number = {18},
	year = {2010},
	note = {<p>cited By 35</p>
},
	abstract = {<p>The effects of zinc concentration on the performance of solution processed amorphous indium gallium zinc oxide (a-IGZO) thin film transistors (TFTs) have been investigated using high-k aluminum titanium oxide as gate dielectric. The x-ray diffraction results confirmed that all the IGZO channel layers are amorphous. The performance of a-IGZO TFTs were investigated in the linear regime operation. Highest linear field-effect mobility of 5.8 cm2 /V s with an Ion / Ioff ratio of 6{\texttimes} 107 and subthreshold swing of 0.28 V/dec were obtained for the a-IGZO (311) TFTs. The obtained performance of the a-IGZO TFTs is very promising for low-voltage display applications. {\textcopyright} 2010 American Institute of Physics.</p>
},
	doi = {10.1063/1.3514249},
	url = {https://www.scopus.com/inward/record.uri?eid=2-s2.0-78649237787\&partnerID=40\&md5=d12b792241977ee232bbd55381319ee2},
	author = {Nayak, P.K.a , Busani, T.a , Elamurugu, E.a , Barquinha, P.a , Martins, R.a , Hong, Y.b , Fortunato, E.a}
}
