@article {Lorenz2010,
	title = {Low-temperature processed Schottky-gated field-effect transistors based on amorphous gallium-indium-zinc-oxide thin films},
	journal = {Applied Physics Letters},
	volume = {97},
	number = {24},
	year = {2010},
	note = {<p>cited By 21</p>
},
	abstract = {<p>We have investigated the electrical properties of metal-semiconductor field-effect transistors (MESFET) based on amorphous oxide semiconductor channels. All functional parts of the devices were sputter-deposited at room temperature. The influence on the electrical properties of a 150 {\textdegree}C annealing step of the gallium-indium-zinc-oxide channel is investigated. The MESFET technology offers a simple route for processing of the transistors with excellent electrical properties such as low subthreshold swing of 112 mV/decade, gate sweep voltages of 2.5 V, and channel mobilities up to 15 cm2 /V s. {\textcopyright} 2010 American Institute of Physics.</p>
},
	doi = {10.1063/1.3525932},
	url = {https://www.scopus.com/inward/record.uri?eid=2-s2.0-78650352232\&partnerID=40\&md5=e13e70609dd1668ba97dd55d037eea0e},
	author = {Lorenz, M.a , Lajn, A.a , Frenzel, H.a , V. Wenckstern, H.a , Grundmann, M.a , Barquinha, P.b , Martins, R.b , Fortunato, E.b}
}
