@article {Gokulakrishnan20111836,
	title = {Effects of O7+ swift heavy ion irradiation on indium oxide thin films},
	journal = {Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms},
	volume = {269},
	number = {16},
	year = {2011},
	note = {<p>cited By 1</p>
},
	pages = {1836-1840},
	abstract = {<p>Indium oxide thin films deposited by spray pyrolysis were irradiated by 100 MeV O7+ ions with different fluences of 5 {\texttimes} 1011, 1 {\texttimes} 1012 and 1 {\texttimes} 1013 ions/cm2. X-ray diffraction analysis confirmed the structure of indium oxide with cubic bixbyite. The strongest (2 2 2) orientation observed from the as-deposited films was shifted to (4 0 0) after irradiation. Furthermore, the intensity of the (4 0 0) orientation was decreased with increasing fluence together with an increase in (2 2 2) intensity. Films irradiated with maximum fluence exhibited an amorphous component. The mobility of the as-deposited indium oxide films was decreased from \~{}78.9 to 43.0 cm2/V s, following irradiation. Films irradiated with a fluence of 5 {\texttimes} 1011 ions/cm2 showed a better combination of electrical properties, with a resistivity of 4.57 {\texttimes} 10-3 Ω cm, carrier concentration of 2.2 {\texttimes} 1019 cm-3 and mobility of 61.0 cm2/V s. The average transmittance obtained from the as-deposited films decreased from \~{}81\% to 72\%, when irradiated with a fluence of 5 {\texttimes} 1011 ions/cm2. The surface microstructures confirmed that the irregularly shaped grains seen on the surface of the as-deposited films is modified as "radish-like" morphology when irradiated with a fluence of 5 {\texttimes} 1011 ions/cm2. {\textcopyright} 2011 Elsevier B.V. All rights reserved.</p>
},
	doi = {10.1016/j.nimb.2011.05.008},
	url = {https://www.scopus.com/inward/record.uri?eid=2-s2.0-79958022721\&partnerID=40\&md5=c47ee1bd610d33f9b306b7a6e89db394},
	author = {Gokulakrishnan, V.a , Parthiban, S.a c , Elangovan, E.c , Ramamurthi, K.a , Jeganathan, K.b , Kanjilal, D.d , Asokan, K.d , Mart}
}
