@article {Olziersky2011512,
	title = {Role of Ga 2O 3-In 2O 3-ZnO channel composition on the electrical performance of thin-film transistors},
	journal = {Materials Chemistry and Physics},
	volume = {131},
	number = {1-2},
	year = {2011},
	note = {<p>cited By 31</p>
},
	pages = {512-518},
	abstract = {<p>In this work we present a study aiming to determine the role of Ga2O3-In2O3-ZnO (GIZO) channel layer composition on the electrical performance and stability exhibited by thin-film transistors (TFTs). The GIZO films were obtained by magnetron sputtering using ceramic targets of different compositions (Ga:In:Zn = 2:2:1, 2:2:2, 2:4:1 and 2:4:2 at.). Structural analysis corroborates the fully amorphous character of the GIZO deposited layers. For the target compositional range used we observe a Zn deficiency on the produced films, which affects the In/Ga atomic concentration ratios. Resistivity and mobility are found to show a general trend against the measured In/Ga ratio that reveals the role played by In and Ga cations on the transport mechanisms. Targets with increased In concentrations (2:4:1 and 2:4:2) allow to obtain the best TFT performances with field effect mobilities reaching values of 53.0 and 51.7cm2 V-1 s-1, respectively. In addition, the In-richer GIZO compositions result in considerably more stable TFTs, especially under positive gate bias stress conditions. Finally, it is verified that by using a target with a slightly lower In atomic composition (2:4:2 in comparison to 2:4:1), good stability and mobility can be achieved with potentially lower material costs.{\textcopyright} 2011 Elsevier B.V. All rights reserved.</p>
},
	doi = {10.1016/j.matchemphys.2011.10.013},
	url = {https://www.scopus.com/inward/record.uri?eid=2-s2.0-84860761855\&partnerID=40\&md5=396450f340d19a8f0b0df4c37031411f},
	author = {Olziersky, A.a , Barquinha, P.b , Vil{\`a}, A.a , Magana, C.a , Fortunato, E.b , Morante, J.R.a c , Martins, R.b}
}
