@conference {Martins2012,
	title = {P-type oxide-based thin film transistors produced at low temperatures},
	booktitle = {Proceedings of SPIE - The International Society for Optical Engineering},
	volume = {8263},
	year = {2012},
	note = {<p>cited By 2</p>
},
	abstract = {<p>P-type thin-film transistors (TFTs) using room temperature sputtered tin and copper oxide as a transparent oxide semiconductor have been produced on rigid and paper substrates. The SnO x films shows p-type conduction presenting a polycrystalline structure composed with a mixture of tetragonal β-Sn and α-SnO x phases, after annealing at 200{\textdegree}C. These films exhibit a hole carrier concentration in the range of ≈ 10 16-10 18 cm -3, electrical resistivity between 101-102 Ωcm, Hall mobility of 4.8 cm 2/Vs, optical band gap of 2.8 eV and average transmittance ≈ 85 \% (400 to 2000 nm). Concerning copper oxide Cu xO thin films they exhibit a polycrystalline structure with a strongest orientation along (111) plane. The Cu xO films produced between an oxygen partial pressure of 9 to 75\% showed p-type behavior, as it was measured by Hall effect and Seebeck measurements. The bottom gate p-type SnO x TFTs present field-effect mobility above 1.24 cm 2/Vs (including the paper p-type oxide TFT) and an on/off modulation ratio of 10 3 while the Cu xO TFTs exhibit a field-effect mobility of 1.3{\texttimes}10 -3 cm 2/Vs and an on/off ratio of 2{\texttimes}10 2. {\textcopyright} 2012 Copyright Society of Photo-Optical Instrumentation Engineers (SPIE).</p>
},
	doi = {10.1117/12.907387},
	url = {https://www.scopus.com/inward/record.uri?eid=2-s2.0-84858598530\&partnerID=40\&md5=e2a6403350a9f30a7a3360d9304eeff2},
	author = {Martins, R.a , Figueiredo, V.a , Barros, R.a b , Barquinha, P.a , Gon{\c c}alves, G.a , Pereira, L.a , Ferreira, I.a , Fortunato, E.a}
}
