@article {Filonovich2012,
	title = {Hydrogen plasma treatment of very thin p-type nanocrystalline Si films grown by RF-PECVD in the presence of B(CH 3) 3},
	journal = {Science and Technology of Advanced Materials},
	volume = {13},
	number = {4},
	year = {2012},
	note = {<p>cited By 6</p>
},
	abstract = {<p>We have characterized the structure and electrical properties of p-type nanocrystalline silicon films prepared by radio-frequency plasma-enhanced chemical vapor deposition and explored optimization methods of such layers for potential applications in thin-film solar cells. Particular attention was paid to the characterization of very thin (\~{}20nm) films. The cross-sectional morphology of the layers was studied by fitting the ellipsometry spectra using a multilayer model. The results suggest that the crystallization process in a high-pressure growth regime is mostly realized through a subsurface mechanism in the absence of the incubation layer at the substrate-film interface. Hydrogen plasma treatment of a 22-nm-thick film improved its electrical properties (conductivity increased more than ten times) owing to hydrogen insertion and Si structure rearrangements throughout the entire thickness of the film. {\textcopyright} 2012 National Institute for Materials Science.</p>
},
	doi = {10.1088/1468-6996/13/4/045004},
	url = {https://www.scopus.com/inward/record.uri?eid=2-s2.0-84866330763\&partnerID=40\&md5=faa3cf51aea297c7aa2acaa5367f596c},
	author = {Filonovich, S.A.a , {\'A}guas, H.a , Busani, T.a , Vicente, A.a , Ara{\'u}jo, A.a , Gaspar, D.a , Vilarigues, M.b , Leit{\~a}o, J.c , Fortun}
}
