@article {Branquinho2013723,
	title = {Plastic compatible sputtered ta-inf o sensitive layer for oxide semiconductor tft sensors},
	journal = {IEEE/OSA Journal of Display Technology},
	volume = {9},
	number = {9},
	year = {2013},
	note = {<p>cited By 3</p>
},
	pages = {723-728},
	abstract = {<p>The effect of post-deposition annealing temperature on the pH sensitivity of room temperature RF sputtered +{\hbox{Ta}}-{2}{\hbox{O}}5 was investigated. Structural and morphological features of these films were analyzed before and after annealing at various temperatures. The deposited films are amorphous up to 600 +^{\circ}{\hbox{C}}+ and crystallize at 700 +^{\circ}{\hbox{C}}+ in an orthorhombic phase. Electrolyte-insulator- semiconductor (EIS) field effect based sensors with an amorphous +{\hbox{Ta}}-{2}{\hbox{O}}5 sensing layer showed pH sensitivity above 50 mV/pH. For sensors annealed above 200 +^{\circ}{\hbox{C}}+ pH sensitivity decreased with increasing temperature. Stabilized sensor response and maximum pH sensitivity was achieved after low temperature annealing at 200 +^{\circ}{\hbox{C}}+ , which is compatible with the use of polymeric substrates and application as sensitive layer in oxides TFT-based sensors. {\textcopyright} 2005-2012 IEEE.</p>
},
	doi = {10.1109/JDT.2012.2229693},
	url = {https://www.scopus.com/inward/record.uri?eid=2-s2.0-84883805532\&partnerID=40\&md5=27694e4b07d737319719fccf41d74ce4},
	author = {Branquinho, R., Pinto, J.V., Busani, T., Barquinha, P., Pereira, L., Baptista, P.V., Martins, R., Fortunato, E.}
}
