@article {Nandy201311699,
	title = {Current transport mechanism at metal-semiconductor nanoscale interfaces based on ultrahigh density arrays of p-type NiO nano-pillars},
	journal = {Nanoscale},
	volume = {5},
	number = {23},
	year = {2013},
	note = {<p>cited By 5</p>
},
	pages = {11699-11709},
	abstract = {<p>The present work focuses on a qualitative analysis of localised I-V characteristics based on the nanostructure morphology of highly dense arrays of p-type NiO nano-pillars (NiO-NPs). Vertically aligned NiO-NPs have been grown on different substrates by using a glancing angle deposition (GLAD) technique. The preferred orientation of as grown NiO-NPs was controlled by the deposition pressure. The NiO-NPs displayed a polar surface with a microscopic dipole moment along the (111) plane (Tasker{\textquoteright}s type III). Consequently, the crystal plane dependent surface electron accumulation layer and the lattice disorder at the grain boundary interface showed a non-uniform current distribution throughout the sample surface, demonstrated by a conducting AFM technique (c-AFM). The variation in I-V for different points in a single current distribution grain (CD-grain) has been attributed to the variation of Schottky barrier height (SBH) at the metal-semiconductor (M-S) interface. Furthermore, we observed that the strain produced during the NiO-NPs growth can modulate the SBH. Inbound strain acts as an external field to influence the local electric field at the M-S interface causing a variation in SBH with the NPs orientation. This paper shows that vertical arrays of NiO-NPs are potential candidates for nanoscale devices because they have a great impact on the local current transport mechanism due to its nanostructure morphology. {\textcopyright} 2013 The Royal Society of Chemistry.</p>
},
	doi = {10.1039/c3nr03803c},
	url = {https://www.scopus.com/inward/record.uri?eid=2-s2.0-84887443594\&partnerID=40\&md5=62c843c97257ecfea0f57371943e622e},
	author = {Nandy, S., Gon{\c c}alves, G., Pinto, J.V., Busani, T., Figueiredo, V., Pereira, L., Paiva Martins, R.F., Fortunato, E.}
}
