@conference {Bahubalindruni2013,
	title = {High-gain amplifier with n-type transistors},
	booktitle = {2013 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2013},
	year = {2013},
	note = {<p>cited By 2</p>
},
	abstract = {<p>A high-gain amplifier topology, with all single n-type enhancement transistors, is proposed in this paper. This type of circuits are essential in transparent TFT technologies, such as GIZO and ZnO that lack complementary type transistor. All circuits were simulated using BSIM3V3 model of a 0.35 μm CMOS technology, due to the absence of a complete electrical model for the TFTs. Results reveal that the proposed circuit promise more gain, lower power consumption and higher bandwidth than the existing solutions under identical bias conditions. {\textcopyright} 2013 IEEE.</p>
},
	doi = {10.1109/EDSSC.2013.6628203},
	url = {https://www.scopus.com/inward/record.uri?eid=2-s2.0-84890482228\&partnerID=40\&md5=dd7f4d4986b174667e414613b505ff86},
	author = {Bahubalindruni, P.a , Tavares, V.G.a , De Oliveira, P.G.a , Barquinha, P.b , Martins, R.b , Fortunato, E.b}
}
