@article {Shan2015541,
	title = {Low-voltage high-stability InZnO thin-film transistor using ultra-thin solution-processed ZrO<inf>x</inf> dielectric},
	journal = {IEEE/OSA Journal of Display Technology},
	volume = {11},
	number = {6},
	year = {2015},
	note = {<p>cited By 2</p>
},
	pages = {541-546},
	abstract = {<p>This paper deals with the evaluation of the performances of InZnO thin-film transistor (TFT) using as dielectric an ultra-thin solution-processed ZrOx layer. The ZrOx thin film was formed using ultraviolet (UV) photo-annealing method and shows a low leakage-current density of 4 nA/cm2 at 3.8 MV/cm and a large areal-capacitance of 775 nF/cm2 at 50 Hz. The InZnO TFT incorporating the UV-treated ZrOx dielectric exhibits high stable and enhanced characteristics, an on/off current ratio of 10</p>
},
	doi = {10.1109/JDT.2014.2366933},
	url = {https://www.scopus.com/inward/record.uri?eid=2-s2.0-84929333677\&partnerID=40\&md5=1ee3f9138763b84ffff07d5bde049f48},
	author = {Shan, F.a , Liu, A.a , Liu, G.a , Meng, Y.a , Fortunato, E.b c , Martins, R.b c}
}
