@article {Bahubalindruni2016419,
	title = {InGaZnO thin-film-transistor-based four-quadrant high-gain analog multiplier on glass},
	journal = {IEEE Electron Device Letters},
	volume = {37},
	number = {4},
	year = {2016},
	note = {<p>cited By 0</p>
},
	pages = {419-421},
	abstract = {<p>This letter presents a novel high-gain four-quadrant analog multiplier using only n-type enhancement indium- gallium-zinc-oxide thin-film-transistors. The proposed circuit improves the gain by using an active load with positive feedback. A Gilbert cell with a diode-connected load is also presented for comparison purposes. Both circuits were fabricated on glass at low temperature (200 {\textdegree}C) and were successfully characterized at room temperature under normal ambient conditions, with a power supply of 15 V and 4-pF capacitive load. The novel circuit has shown a gain improvement of 7.2 dB over the Gilbert cell with the diode-connected load. Static linearity response, total harmonic distortion, frequency response, and power consumption are reported. This circuit is an important signal processing building block in large-area sensing and readout systems, specially if data communication is involved. {\textcopyright} 2016 IEEE.</p>
},
	doi = {10.1109/LED.2016.2535469},
	url = {https://www.scopus.com/inward/record.uri?eid=2-s2.0-84963839212\&partnerID=40\&md5=2d6c653ce01a9594eae321daaf5151c2},
	author = {Bahubalindruni, P.G.a , Tavares, V.G.b , Borme, J.c , De Oliveira, P.G.b , Martins, R.a , Fortunato, E.a , Barquinha, P.a}
}
