@article {Liu2016,
	title = {Solution-Processed Alkaline Lithium Oxide Dielectrics for Applications in n- and p-Type Thin-Film Transistors},
	journal = {Advanced Electronic Materials},
	volume = {2},
	number = {9},
	year = {2016},
	note = {<p>cited By 0</p>
},
	abstract = {<p>High-k alkaline lithium oxide (LiOx) thin films are fabricated by spin-coating method. The LiOx thin films are annealed at different temperatures and characterized by various techniques. An optimized LiOx dielectric is achieved at an annealing temperature of 300 {\textdegree}C and exhibits wide bandgap of ≈5.5 eV, smooth surface, relatively permittivity of ≈6.7, and low leakage current density. The as-fabricated LiOx thin films are integrated, as gate dielectrics, in both n-channel indium oxide (In2O3) and p-channel cupric oxide (CuO) transistors. The optimized In2O3/LiOx thin-film transistor (TFT) exhibits high performance and high stability, such as Ion/Ioff of 107, electron mobility of 5.69 cm2 V-1 s-1, subthreshold swing of 70 mV dec-1, negligible hysteresis, and threshold voltage shift of 0.1 V under bias stress for 1.5 h. Meanwhile, the p-channel CuO TFT based on LiOx dielectric shows high Ion/Ioff of 105 and hole mobility of 1.72 cm2 V-1 s-1. All the electrical performances are achieved at an ultra-low operating voltage of 2 V. Considering the simple procedure, the moderate annealing temperature, and the low power consumption merits, these outstanding characteristics represent a significant advance toward the development of battery compatible and portable electronics. {\textcopyright} 2016 WILEY-VCH Verlag GmbH \&amp; Co. KGaA, Weinheim</p>
},
	doi = {10.1002/aelm.201600140},
	url = {https://www.scopus.com/inward/record.uri?eid=2-s2.0-84978872985\&partnerID=40\&md5=4aa037be9fb7e08f7c4b9f1de20ecc93},
	author = {Liu, A.a b c , Liu, G.a b c , Zhu, C.a b c , Zhu, H.a b c , Fortunato, E.d , Martins, R.d , Shan, F.a b c}
}
