@article {Moldovan201681,
	title = {A compact model and direct parameters extraction techniques For amorphous gallium-indium-zinc-oxide thin film transistors},
	journal = {Solid-State Electronics},
	volume = {126},
	year = {2016},
	note = {<p>cited By 0</p>
},
	pages = {81-86},
	abstract = {<p>An advanced compact and analytical drain current model for the amorphous gallium indium zinc oxide (GIZO) thin film transistors (TFTs) is proposed. Its output saturation behavior is improved by introducing a new asymptotic function. All model parameters were extracted using an adapted version of the Universal Method and Extraction Procedure (UMEM) applied for the first time for GIZO devices in a simple and direct form. We demonstrate the correct behavior of the model for negative VDS, a necessity for a complete compact model. In this way we prove the symmetry of source and drain electrodes and extend the range of applications to both signs of VDS. The model, in Verilog-A code, is implemented in Electronic Design Automation (EDA) tools, such as Smart Spice, and compared with measurements of TFTs. It describes accurately the experimental~characteristics in the whole range of GIZO TFTs operation,~making the~model~suitable for the design of circuits using these types of devices. {\textcopyright} 2016 Elsevier Ltd</p>
},
	doi = {10.1016/j.sse.2016.09.011},
	url = {https://www.scopus.com/inward/record.uri?eid=2-s2.0-84994316272\&partnerID=40\&md5=2fabff4e66ae1543884be257d43d89a2},
	author = {Moldovan, O.a , Castro-Carranza, A.b , Cerdeira, A.c , Estrada, M.c , Barquinha, P.d , Martins, R.d , Fortunato, E.d , Miljakovi}
}
