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Sanematsu, M.S.a, Pereyra Andrade Martins I. a A. M. "Highly uniform large-area a-Si:H films." Solar Cells. 14 (1985): 281-287. AbstractWebsite

A double-chamber system was used to deposit large-area hydrogenated amorphous silicon films for photovoltaic applications. The electro-optical characterisation of films of area 400 cm2 deposited on glass substrates is described in this paper. The deposition rate of the films is dependent on the r.f. power delivered, the substrate bias and the partial pressure of the reactive gas. The film thickness was observed to have a uniformity of better than 0.5%. The best film quality was obtained for a deposition rate of about 1.5 Å s-1. The optical gap, activation energy, photosensitivity, density of gap states and hydrogen content were determined. © 1985.

Santos, L.a, Wojcik Pinto Elangovan Viegas Pereira Martins Fortunato P. a J. V. "Structure and morphologic influence of WO3 nanoparticles on the electrochromic performance of dual-phase a -WO3/WO3 inkjet printed films." Advanced Electronic Materials. 1 (2015). AbstractWebsite

The optimization of tungsten trioxide (WO3) nanoparticles produced via hydrothermal synthesis for application in electrochromic (EC) devices is reported. The structure and morphology of the nanoparticles are controlled by changing the acidity of the aqueous solvent added to the sol-gel precursor (peroxopolytungstic acid) during synthesis. Orthorhombic hydrated WO3 nanorods or monoclinic WO3 nanoslabs are obtained when HCl is added, while synthesis only in aqueous medium results in a mixture of both types of polymorphs. Dual-phase thin films are processed by inkjet printing deposition of the nanoparticles in flexible polyethylene terephthalate substrate with indium tin oxide coating (ITO PET) followed by the deposition of the precursor solution. When compared with purely amorphous tungsten oxide films, the dual phase ones present higher optical densities and improved capacity, and cyclability stability. The best results, obtained for orthorhombic hydrated nanoparticles (ortho -WO3 ·0.33H2 O), are due to its high surface area and improved conductivity. Additionally, the ex situ X-ray diffraction (XRD) lithiation studies show evidence of a higher distortion of the monoclinic when compared with the orthorhombic crystallographic structure, which contribute to the inferior EC performance. These results validate the use of inkjet printing deposition with low processing temperatures for EC dual-phase thin films containing optimized nanoparticles which are compatible with low-cost substrates. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Santos, V.a, Borges Ranito Pires Araújo Marques Tomás Fortunato Martins Nunes J. P. a C. "Novel multilayer coatings on polyethylene for acetabular devices." Materials Science Forum. 514-516 (2006): 868-871. AbstractWebsite

Total hip replacement is a common practice in every day clinical work. Artificial hip implants consist of a femoral component and an acetabular component. Nowadays the acetabular component is composed of a polymeric cup and a metallic shell. This study focuses the development of an innovative acetabular component substituting the metallic shell by a multilayer coating on the acetabular cup. A titanium coating was deposited onto ultra-high molecular weight polyethylene (UHMWPE) samples by physical vapour deposition (PVD), having an in situ pre-treatment with argon ion bombardment in order to optimize the adhesive strength by surface modification, followed by the deposition of a thin film of hydroxyapatite (HA) using rf magnetron sputtering technique, at room temperature. Results obtained seem to indicate that these multilayer coatings can be a viable alternative to the metallic shell, leading to the substitution of a two part for a one part acetabular component.

Santos, L., Nunes Calmeiro Branquinho Salgueiro Barquinha Pereira Martins Fortunato D. T. R. "Solvothermal synthesis of gallium-indium-zinc-oxide nanoparticles for electrolyte-gated transistors." ACS Applied Materials and Interfaces. 7 (2015): 638-646. AbstractWebsite

Solution-processed field-effect transistors are strategic building blocks when considering low-cost sustainable flexible electronics. Nevertheless, some challenges (e.g., processing temperature, reliability, reproducibility in large areas, and cost effectiveness) are requirements that must be surpassed in order to achieve high-performance transistors. The present work reports electrolyte-gated transistors using as channel layer gallium-indium-zinc-oxide nanoparticles produced by solvothermal synthesis combined with a solid-state electrolyte based on aqueous dispersions of vinyl acetate stabilized with cellulose derivatives, acrylic acid ester in styrene and lithium perchlorate. The devices fabricated using this approach display a ION/IOFF up to 1 × 106, threshold voltage (VTh) of 0.3-1.9 V, and mobility up to 1 cm2/(V s), as a function of gallium-indium-zinc-oxide ink formulation and two different annealing temperatures. These results validates the usage of electrolyte-gated transistors as a viable and promising alternative for nanoparticle based semiconductor devices as the electrolyte improves the interface and promotes a more efficient step coverage of the channel layer, reducing the operating voltage when compared with conventional dielectrics gating. Moreover, it is shown that by controlling the applied gate potential, the operation mechanism of the electrolyte-gated transistors can be modified from electric double layer to electrochemical doping. © 2014 American Chemical Society.

Santos, R., Loureiro Nogueira Elangovan Pinto Veiga Busani Fortunato Martins Ferreira J. A. E. "Thermoelectric properties of V2O5 thin films deposited by thermal evaporation." Applied Surface Science. 282 (2013): 590-594. AbstractWebsite

This work reports the structural, optical, electrical and thermoelectric properties of vanadium pentoxide (V2O5) thin films deposited at room temperature by thermal evaporation on Corning glass substrates. A post-deposition thermal treatment up to 973 K under atmospheric conditions induces the crystallization of the as-deposited amorphous films with an orthorhombic V2O5 phase with grain sizes around 26 nm. As the annealing temperature rises up to 773 K the electrical conductivity increases. The films exhibit thermoelectric properties with a maximum Seebeck coefficient of -218 μV/K and electrical conductivity of 5.5 (Ω m) -1. All the films show NIR-Vis optical transmittance above 60% and optical band gap of 2.8 eV. © 2013 Elsevier B.V. All rights reserved.

Seiroco, H., Vincente Ferreira Fernandes Marvão Martins Fortunato Martins M. J. F. "New adhesion process based on lead-free solder applied in electronic power devices." Key Engineering Materials. 230-232 (2002): 92-95. AbstractWebsite

The aim of this paper is to present a set of electric data concerning the performances before and after ageing of Cu-Sn-Cu joins used to solder power diodes and to compare the results achieved with the ones obtained in diodes soldered using the conventional technology. The set of results achieved show that the Cu-Sn-Cu joins present even better performances than the ones exhibited by diodes soldered using the conventional technology, without requiring the use of Mo discs to be inserted between the silicon crystal and the metal contacts (stud or finger) to compensate thermal mismatches.

Sekhar, M.C.a, Uthanna Martins Chandra Elangovan S. a R. b. "The effect of Substrate temperature on physical and electrical properties of DC magnetron sputtered (Ta 2O 5) 0.85(TiO 2) 0.15 films." IOP Conference Series: Materials Science and Engineering. Vol. 34. 2012. Abstract

Thin films of (Ta 2O 5) 0.85(TiO 2) 0.15 were deposited on quartz and p-Si substrates by DC reactive magnetron sputtering at different substrate temperatures (T s) in the range 303 - 873 K. The films deposited at 303 0K were in the amorphous and it transformed to crystalline at substrate temperatures ≥ 573 0K. The crystallite size was increased from 50 nm to 72 nm with the increase of substrate temperature. The surface morphology was significantly influenced with the substrate temperature. After deposition of the (Ta 2O 5) 0.85(TiO 2) 0.15 films on Si, aluminium (Al) electrode was deposited to fabricate metal/oxide/semiconductor (MOS) capacitors with a configuration of Al/(Ta 2O 5) 0.85(TiO 2) 0.15/Si. A low leakage current of 7.7 × 10 -5 A/cm 2 was obtained from the films deposited at 303 K. The leakage current was decreased to 9.3 × 10 -8 A/cm 2 with the increase of substrate temperature owing to structural changes. The conduction mechanism of the Al/(Ta 2O 5) 0.85(TiO 2) 0.15/Si capacitors was analyzed and compared with mechanisms of Poole-Frenkel and Schottky emissions. The optical band gap (E g) was decreased from 4.45 eV to 4.38 eV with the increase in substrate temperature. © Published under licence by IOP Publishing Ltd.

c c Shan, F.a, Liu Liu Meng Fortunato Martins A. a G. a. "Low-voltage high-stability InZnO thin-film transistor using ultra-thin solution-processed ZrOx dielectric." IEEE/OSA Journal of Display Technology. 11 (2015): 541-546. AbstractWebsite

This paper deals with the evaluation of the performances of InZnO thin-film transistor (TFT) using as dielectric an ultra-thin solution-processed ZrOx layer. The ZrOx thin film was formed using ultraviolet (UV) photo-annealing method and shows a low leakage-current density of 4 nA/cm2 at 3.8 MV/cm and a large areal-capacitance of 775 nF/cm2 at 50 Hz. The InZnO TFT incorporating the UV-treated ZrOx dielectric exhibits high stable and enhanced characteristics, an on/off current ratio of 10

Silva, L.B.a, Veigas Doria Costa Inácio Martins Fortunato Baptista B. b G. b. "Portable optoelectronic biosensing platform for identification of mycobacteria from the Mycobacterium tuberculosis complex." Biosensors and Bioelectronics. 26 (2011): 2012-2017. AbstractWebsite

In this paper we report on the fabrication and performance of a portable and low cost optoelectronic platform integrating a double color tuned light emitting diode as light source, an amorphous/nanocrystalline silicon photodetector with a flat spectral response in the wavelength range from 520. nm to 630. nm and integrated electronic for signal acquisition and conditioning constituted by current to voltage converter, a filter and an amplification stage, followed by an analog to digital converter, with appropriate software for full automation to minimize human error. Incorporation of the double color tuned light emitting diode provides for a simple yet innovative solution to signal acquisition independently from the light intensity and/or solution concentration, while considerably decreasing production costs. Detection based on Au-nanoprobes constitutes the biorecognition step and allowed identification of specific sequences of Mycobacterium tuberculosis complex, namely Mycobacterium bovis and M. tuberculosis in biological samples. © 2010 Elsevier B.V.

Silva, A., Raniero Ferreira Águas Pereira Fortunato Martins L. E. H. "Silicon etching in CF4/O2 and SF6 atmospheres." Materials Science Forum. 455-456 (2004): 120-123. AbstractWebsite

The aim of this work is to present a process able to allow a fast method to clean plasma enhanced chemical vapour deposition (PECVD) systems used to produce amorphous silicon films and their alloys, and a proper device patterning when required. In this work we propose to study CF4/O2 or SF6 as etchant gases at room temperature to perform cleaning and films patterning. The aim is to select the process that leads to a faster cleaning process without formation of residual contaminants or to anisotropic patterning of very thin layers. The influence of some plasma parameters, such as pressure (p), power (P) and flow (f) for the etchant gases used will be also analysed.

Silva, L.B.a, Baptista Raniero Doria Martins Fortunato P. b L. c. "Characterization of optoelectronic platform using an amorphous/nanocrystalline silicon biosensor for the specific identification of nucleic acid sequences based on gold nanoparticle probes." Sensors and Actuators, B: Chemical. 132 (2008): 508-511. AbstractWebsite

Nanotechnology is having a positive impact on nearly every industry, and in particular in healthcare, where it is extending the limits of molecular diagnostics to the nanoscale-nanodiagnostics. Here we describe an innovative optoelectronic platform for the colorimetric detection of nucleic acids based on oligonucleotide-derivatized gold nanoparticles. The device integrates an amorphous/nanocrystalline biosensor and a light emission source with a gold nanoprobe for specific DNA detection. This low cost, fast and simple optoelectronic platform permits detection of few picomole of nucleic acid without target or signal amplification making it suitable for application in population diagnostics and in point-of-care hand-held devices. © 2007 Elsevier B.V. All rights reserved.

Silva, L.B.a, Baptista Raniero Doria Franco Martins Fortunato P. b L. c. "Novel Optoelectronic platform using an amorphous/nanocrystalline Silicon biosensor for the specific identification of unamplified nucleic Acid sequences based on gold nanoparticle probes." TRANSDUCERS and EUROSENSORS '07 - 4th International Conference on Solid-State Sensors, Actuators and Microsystems. 2007. 935-938. Abstract

Here we describe an innovative optoelectronic platform which enables the specific detection of unamplified nucleic acid sequences with the integration of oligonucleotide-derivatized gold nanoparticles, a colour sensor and a light emission source for a colorimetric detection method. This new low cost, fast and simple optoelectronic platform permits detection of less than 1 picomole quantities of nucleic acid without target or signal amplification. ©2007 IEEE.