@article {Mu{\c s}at2003967,
	title = {Thermal decomposition of a sol-gel precursor for C-axis oriented Al-doped ZnO thin films},
	journal = {Revue Roumaine de Chimie},
	volume = {48},
	number = {12},
	year = {2003},
	note = {<p>cited By 3</p>
},
	pages = {967-974},
	abstract = {<p>The thermal decomposition and crystallization behaviour of a sol-gel precursor used for the preparation of c-axis oriented Al-doped ZnO thin films were investigated in the temperature range 20-600{\textdegree}C by TG-DTA, IR spectroscopy and XRD analysis. At low temperature, the formation of ZnO crystallites from the sol precursor, prepared by dissolving Zn(CH 3COO)2{\textperiodcentered}2H2O and AlCl 3{\textperiodcentered}6H2O in 2-methoxyethanol and monoethanol amine, takes place via zinc carbonate hydroxide (sclarite/hydrozincite) and occurs simultaneously with the decomposition of this intermediary compound, which occurs above 150{\textdegree}C. At 200{\textdegree}C, the crystalline structure is well defined in terms of ZnO hexagonal lattice parameters, although an important amount of residual organic compounds and water was not yet removed. Increasing the treatment temperature up to 300, 400 and 600{\textdegree}C leads to a gradual removal of the residual organic compounds and therefore to a small change of the ZnO crystalline structure in terms of lattice parameters and grain size.</p>
},
	url = {https://www.scopus.com/inward/record.uri?eid=2-s2.0-8344260624\&partnerID=40\&md5=e90edfc256b8aac774fcf0d7583646ca},
	author = {Mu{\c s}at, V.a and Monteiro, R.b and Martins, R.b}
}
